smd type transistors 2SD1367 features low frequency power amplifier. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 16 v emitter to base voltage v ebo 6v collector current i c 2a peak collector current i cp * 1 3a collector power dissipation p c * 2 1w junction temperature tj 150 storage temperature t stg -55to+150 *1. pw 10 ms; d 0.02. *2. value on the alumina ceramic board (12.5 x 20 x 0.7 mm) electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c =10a,i e =0 20 v collector to emitter breakdown voltage v (br)ceo i c =1ma,r be = 16 v emitter to base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cutoff current i cbo v cb =16v,i e =0 0.1 a emitter cutoff current i ebo v eb =5v,i c =0 0.1 a dc current transfer ratio h fe v ce =2v,i c = 0.1 a 100 500 collector to emitter saturation voltage v ce(sat) i c =1a,i b = 0.1 a 0.15 0.3 v base to emitter saturation voltage v be(sat) i c =1a,i b = 0.1 a 0.9 1.2 v gain bandwidth product f t v ce =2v,i c = 10 ma 100 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 20 pf h fe classification marking ba bb bc hfe 100 200 160 320 250 500 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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